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| 2N3700 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C at T c as e 25 C at T c as e 100 C Storage and Junction Temperature Value 140 80 7 1 0.5 1.8 1 - 65 to 200 Unit V V V A W W W C 1/4 T s t g, T j January 1989 2N3700 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97 350 C/W C/W ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CBO I E BO V (B R)CBO V (BR)CE O * V (B R)E BO V CE( sat )* V BE( sat )* h F E* Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA IC = 1 A I C = 150 mA T amb = - 55 C hfe fT C EBO C CBO r b b 'C b 'c Small Signal Current Gain Transition Frequency Emitter-base Capacitance Collector-base Capacitance Feedback Time Constant I C = 1 mA f = 1 kHz I C = 50 mA f = 20 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz I C = 10 mA f = 4 MHz V CE V CE V CE V CE V CE V CE = 10 = 10 = 10 = 10 = 10 = 10 V V V V V V 50 90 100 50 15 40 V CE = 5 V V CE = 10 V V E B = 0.5 V V CB = 10 V V CB = 10 V 25 80 100 60 12 400 400 MHz pF pF ps Test Conditions V CB = 90 V V CB = 90 V V EB = 5 V I C = 100 A I C = 30 mA I E = 100 A I C = 150 mA I C = 500 mA I C = 150 mA I B = 15 mA I B = 50 mA I B = 15 mA 140 80 7 0.2 0.5 1.1 T amb = 150 C Min. Typ. Max. 10 10 10 Unit nA A nA V V V V V V 300 * Pulsed : pulse duration = 300 s, duty cycle = 1 %. 2/4 2N3700 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 3/4 2N3700 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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